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IRFL210PBF MOSFET Transistor

The IRFL210PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFL210PBF transistor as follows.

Circuit diagram symbol of the IRFL210PBF transistor

IRFL210PBF Transistor Specification

Transistor Code IRFL210PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT223
Transistor SMD Code FL210
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.96A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 53pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 4V

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