IRFL110PBF MOSFET Transistor

The IRFL110PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFL110PBF transistor as follows.

IRFL110PBF Transistor Specification

Transistor Code		IRFL110PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Transistor SMD Code		FL110
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.54Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		81pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		4V

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