IRFL1006PBF MOSFET Transistor

The IRFL1006PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFL1006PBF transistor as follows.

IRFL1006PBF Transistor Specification

Transistor Code		IRFL1006PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Transistor SMD Code		FL1006
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.22Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		55pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		4V

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