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IRFIBC30G MOSFET Transistor

The IRFIBC30G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFIBC30G transistor as follows.

Circuit diagram symbol of the IRFIBC30G transistor

IRFIBC30G Transistor Specification

Transistor Code IRFIBC30G
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 2.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.2Ohm
Power Dissipation (Maximum) PD 35W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 31nC

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