IRFI820GPBF MOSFET Transistor

The IRFI820GPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFI820GPBF transistor as follows.

IRFI820GPBF Transistor Specification

Transistor Code		IRFI820GPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		92pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.6nS
Gate-Threshold Voltage (Maximum)		4V

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