IRFI820G MOSFET Transistor

The IRFI820G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFI820G transistor as follows.

IRFI820G Transistor Specification

Transistor Code		IRFI820G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3Ohm
Power Dissipation (Maximum)	PD	30W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		24nC

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