IRFI530G MOSFET Transistor

The IRFI530G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFI530G transistor as follows.

IRFI530G Transistor Specification

Transistor Code		IRFI530G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	42W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		4V

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