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IRFI4110GPBF MOSFET Transistor

The IRFI4110GPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFI4110GPBF transistor as follows.

Circuit diagram symbol of the IRFI4110GPBF transistor

IRFI4110GPBF Transistor Specification

Transistor Code IRFI4110GPBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 72A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0045Ohm
Power Dissipation (Maximum) PD 61W
Drain-Source Capacitance 680pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 58nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 290nC

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