IRFHS8342PBF MOSFET Transistor

The IRFHS8342PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFHS8342PBF transistor as follows.

IRFHS8342PBF Transistor Specification

Transistor Code		IRFHS8342PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN2X2
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	2.1W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		8.7nC

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