IRFHS8242PBF MOSFET Transistor

The IRFHS8242PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFHS8242PBF transistor as follows.

IRFHS8242PBF Transistor Specification

Transistor Code		IRFHS8242PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN2X2
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	2.1W
Drain-Source Capacitance		171pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		10.4nC

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