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IRFHM9331PBF MOSFET Transistor

The IRFHM9331PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFHM9331PBF transistor as follows.

Circuit diagram symbol of the IRFHM9331PBF transistor

IRFHM9331PBF Transistor Specification

Transistor Code IRFHM9331PBF
Transistor Type MOSFET
Control Channel Type P-Channel
Package PQFN3.3X3.3
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.01Ohm
Power Dissipation (Maximum) PD 2.8W
Drain-Source Capacitance 310pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 27nS
Gate-Threshold Voltage (Maximum) 2.4V
Total Gate Charge 32nC

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