IRFHM8363PBF MOSFET Transistor

The IRFHM8363PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFHM8363PBF transistor as follows.

IRFHM8363PBF Transistor Specification

Transistor Code		IRFHM8363PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN3.3X3.3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0149Ohm
Power Dissipation (Maximum)	PD	2.7W
Drain-Source Capacitance		260pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		94nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		6.7nC

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