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IRFHM8363 MOSFET Transistor

The IRFHM8363 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFHM8363 transistor as follows.

Circuit diagram symbol of the IRFHM8363 transistor

IRFHM8363 Transistor Specification

Transistor Code IRFHM8363
Transistor Type MOSFET
Control Channel Type N-Channel
Package PQFN3.3X3.3E
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0149Ohm
Power Dissipation (Maximum) PD 2.7W

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