IRFHM8337 MOSFET Transistor

The IRFHM8337 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFHM8337 transistor as follows.

IRFHM8337 Transistor Specification

Transistor Code		IRFHM8337
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN3.3X3.3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0124Ohm
Power Dissipation (Maximum)	PD	2.8W
Drain-Source Capacitance		171pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		5.4nC

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