IRFHM8326 MOSFET Transistor

The IRFHM8326 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFHM8326 transistor as follows.

IRFHM8326 Transistor Specification

Transistor Code		IRFHM8326
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN3.3X3.3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0047Ohm
Power Dissipation (Maximum)	PD	2.8W
Drain-Source Capacitance		524pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		2.2V
Total Gate Charge		20nC

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