IRFHM831PBF MOSFET Transistor

The IRFHM831PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFHM831PBF transistor as follows.

IRFHM831PBF Transistor Specification

Transistor Code		IRFHM831PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN3.3X3.3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0078Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		7.3nC

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