IRFHM830D MOSFET Transistor

The IRFHM830D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFHM830D transistor as follows.

IRFHM830D Transistor Specification

Transistor Code		IRFHM830D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN3.3X3.3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0043Ohm
Power Dissipation (Maximum)	PD	2.8W
Operating Junction Temperature (Maximum)		150°C

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