IRFH8330 MOSFET Transistor

The IRFH8330 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH8330 transistor as follows.

IRFH8330 Transistor Specification

Transistor Code		IRFH8330
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0066Ohm
Power Dissipation (Maximum)	PD	3.3W
Operating Junction Temperature (Maximum)		150°C

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