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IRFH8318 MOSFET Transistor

The IRFH8318 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH8318 transistor as follows.

Circuit diagram symbol of the IRFH8318 transistor

IRFH8318 Transistor Specification

Transistor Code IRFH8318
Transistor Type MOSFET
Control Channel Type N-Channel
Package PQFN5X6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 27A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0031Ohm
Power Dissipation (Maximum) PD 3.6W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 19nC

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