IRFH8307 MOSFET Transistor

The IRFH8307 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH8307 transistor as follows.

IRFH8307 Transistor Specification

Transistor Code		IRFH8307
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	42A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0013Ohm
Power Dissipation (Maximum)	PD	3.6W
Drain-Source Capacitance		1360pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		50nC

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