IRFH8303 MOSFET Transistor

The IRFH8303 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH8303 transistor as follows.

IRFH8303 Transistor Specification

Transistor Code		IRFH8303
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	43A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0011Ohm
Power Dissipation (Maximum)	PD	3.7W
Drain-Source Capacitance		1363pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		91nS
Gate-Threshold Voltage (Maximum)		2.2V
Total Gate Charge		58nC

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