IRFH8201 MOSFET Transistor

The IRFH8201 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH8201 transistor as follows.

IRFH8201 Transistor Specification

Transistor Code		IRFH8201
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	49A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00095Ohm
Power Dissipation (Maximum)	PD	3.6W
Drain-Source Capacitance		1730pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		54nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		56nC

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