IRFH7936PBF MOSFET Transistor

The IRFH7936PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH7936PBF transistor as follows.

IRFH7936PBF Transistor Specification

Transistor Code		IRFH7936PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0048Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		450pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		17nC

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