IRFH7932PBF MOSFET Transistor

The IRFH7932PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH7932PBF transistor as follows.

IRFH7932PBF Transistor Specification

Transistor Code		IRFH7932PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0033Ohm
Power Dissipation (Maximum)	PD	3.4W
Drain-Source Capacitance		830pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		48nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		34nC

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