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IRFH7911PBF MOSFET Transistor

The IRFH7911PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH7911PBF transistor as follows.

Circuit diagram symbol of the IRFH7911PBF transistor

IRFH7911PBF Transistor Specification

Transistor Code IRFH7911PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package PQFN5X6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0086Ohm
Power Dissipation (Maximum) PD 2.4W
Drain-Source Capacitance 230pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 2.35V
Total Gate Charge 8.3nC

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