IRFH7190 MOSFET Transistor

The IRFH7190 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH7190 transistor as follows.

IRFH7190 Transistor Specification

Transistor Code		IRFH7190
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	3.6W
Drain-Source Capacitance		836pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.1nS
Gate-Threshold Voltage (Maximum)		3.6V
Total Gate Charge		26nC

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