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IRFH7190 MOSFET Transistor

The IRFH7190 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH7190 transistor as follows.

Circuit diagram symbol of the IRFH7190 transistor

IRFH7190 Transistor Specification

Transistor Code IRFH7190
Transistor Type MOSFET
Control Channel Type N-Channel
Package PQFN5X6
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 15A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0075Ohm
Power Dissipation (Maximum) PD 3.6W
Drain-Source Capacitance 836pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6.1nS
Gate-Threshold Voltage (Maximum) 3.6V
Total Gate Charge 26nC

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