IRFH7188 MOSFET Transistor

The IRFH7188 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH7188 transistor as follows.

IRFH7188 Transistor Specification

Transistor Code		IRFH7188
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	3.8W
Drain-Source Capacitance		1074pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4.5nS
Gate-Threshold Voltage (Maximum)		3.6V
Total Gate Charge		33nC

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