IRFH7185 MOSFET Transistor

The IRFH7185 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH7185 transistor as follows.

IRFH7185 Transistor Specification

Transistor Code		IRFH7185
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0052Ohm
Power Dissipation (Maximum)	PD	3.6W
Drain-Source Capacitance		1070pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.9nS
Gate-Threshold Voltage (Maximum)		3.6V
Total Gate Charge		36nC

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