IRFH7110 MOSFET Transistor

The IRFH7110 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH7110 transistor as follows.

IRFH7110 Transistor Specification

Transistor Code		IRFH7110
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0135Ohm
Power Dissipation (Maximum)	PD	3.6W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		58nC

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