IRFH6200PBF MOSFET Transistor

The IRFH6200PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH6200PBF transistor as follows.

IRFH6200PBF Transistor Specification

Transistor Code		IRFH6200PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	49A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00099Ohm
Power Dissipation (Maximum)	PD	3.6W
Drain-Source Capacitance		2890pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		74nS
Gate-Threshold Voltage (Maximum)		1.1V
Total Gate Charge		155nC

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