IRFH6200 MOSFET Transistor

The IRFH6200 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH6200 transistor as follows.

IRFH6200 Transistor Specification

Transistor Code		IRFH6200
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	49A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0012Ohm
Power Dissipation (Maximum)	PD	3.6W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		155nC

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