IRFH5306 MOSFET Transistor

The IRFH5306 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH5306 transistor as follows.

IRFH5306 Transistor Specification

Transistor Code		IRFH5306
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0081Ohm
Power Dissipation (Maximum)	PD	3.6W
Operating Junction Temperature (Maximum)		150°C

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