IRFH5302D MOSFET Transistor

The IRFH5302D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH5302D transistor as follows.

IRFH5302D Transistor Specification

Transistor Code		IRFH5302D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	29A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0025Ohm
Power Dissipation (Maximum)	PD	3.6W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		26nC

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