IRFH5250PBF MOSFET Transistor

The IRFH5250PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH5250PBF transistor as follows.

IRFH5250PBF Transistor Specification

Transistor Code		IRFH5250PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00115Ohm
Power Dissipation (Maximum)	PD	3.6W
Drain-Source Capacitance		1758pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		46nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		52nC

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