IRFH5220 MOSFET Transistor

The IRFH5220 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH5220 transistor as follows.

IRFH5220 Transistor Specification

Transistor Code		IRFH5220
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0999Ohm
Power Dissipation (Maximum)	PD	3.6W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		20nC

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