IRFH5206PBF MOSFET Transistor

The IRFH5206PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH5206PBF transistor as follows.

IRFH5206PBF Transistor Specification

Transistor Code		IRFH5206PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0067Ohm
Power Dissipation (Maximum)	PD	3.6W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		40nC

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