IRFH5106PBF MOSFET Transistor

The IRFH5106PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH5106PBF transistor as follows.

IRFH5106PBF Transistor Specification

Transistor Code		IRFH5106PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0056Ohm
Power Dissipation (Maximum)	PD	3.6W
Drain-Source Capacitance		460pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		50nC

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