IRFH3702PBF MOSFET Transistor

The IRFH3702PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFH3702PBF transistor as follows.

IRFH3702PBF Transistor Specification

Transistor Code		IRFH3702PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0071Ohm
Power Dissipation (Maximum)	PD	2.8W
Drain-Source Capacitance		306pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		9.6nC

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