IRFG5210 MOSFET Transistor

The IRFG5210 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFG5210 transistor as follows.

IRFG5210 Transistor Specification

Transistor Code		IRFG5210
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		MO-036AB
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.68A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.6Ohm
Power Dissipation (Maximum)	PD	1.4W
Drain-Source Capacitance		56pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.4nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		9.5nC

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