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IRFG110 MOSFET Transistor

The IRFG110 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFG110 transistor as follows.

Circuit diagram symbol of the IRFG110 transistor

IRFG110 Transistor Specification

Transistor Code IRFG110
Transistor Type MOSFET
Control Channel Type N-Channel
Package MO-036AB
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.7Ohm
Power Dissipation (Maximum) PD 1.4W
Drain-Source Capacitance 82pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 15nC

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