IRFF9112 MOSFET Transistor

The IRFF9112 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFF9112 transistor as follows.

IRFF9112 Transistor Specification

Transistor Code		IRFF9112
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO39
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	15W
Drain-Source Capacitance		85pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4V

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