IRFE9110 MOSFET Transistor

The IRFE9110 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFE9110 transistor as follows.

IRFE9110 Transistor Specification

Transistor Code		IRFE9110
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		LCC4
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.38Ohm
Power Dissipation (Maximum)	PD	11W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		15nC

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