IRFE120 MOSFET Transistor

The IRFE120 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFE120 transistor as follows.

IRFE120 Transistor Specification

Transistor Code		IRFE120
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LCC4
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.345Ohm
Power Dissipation (Maximum)	PD	14W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		17nC

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