IRFDC20 MOSFET Transistor

The IRFDC20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFDC20 transistor as follows.

IRFDC20 Transistor Specification

Transistor Code		IRFDC20
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HEXDIP
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	0.32A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.4Ohm
Power Dissipation (Maximum)	PD	1.3W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		18nC

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