IRFD9210PBF MOSFET Transistor

The IRFD9210PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFD9210PBF transistor as follows.

IRFD9210PBF Transistor Specification

Transistor Code		IRFD9210PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DIP-4
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		54pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8.9nC

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