IRFD9110PBF MOSFET Transistor

The IRFD9110PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFD9110PBF transistor as follows.

IRFD9110PBF Transistor Specification

Transistor Code		IRFD9110PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DIP-4
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		94pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8.7nC

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