IRFD9020PBF MOSFET Transistor

The IRFD9020PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFD9020PBF transistor as follows.

IRFD9020PBF Transistor Specification

Transistor Code		IRFD9020PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DIP-4
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.28Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		68nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		19nC

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