IRFD310PBF MOSFET Transistor

The IRFD310PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFD310PBF transistor as follows.

IRFD310PBF Transistor Specification

Transistor Code		IRFD310PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIP-4
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.6Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		34pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.9nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		17nC

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