IRFD224 MOSFET Transistor

The IRFD224 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFD224 transistor as follows.

IRFD224 Transistor Specification

Transistor Code		IRFD224
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HEXDIP
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	0.76A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	1.3W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		14nC

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