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IRFD214 MOSFET Transistor

The IRFD214 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFD214 transistor as follows.

Circuit diagram symbol of the IRFD214 transistor

IRFD214 Transistor Specification

Transistor Code IRFD214
Transistor Type MOSFET
Control Channel Type N-Channel
Package HEXDIP
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 0.57A
Drain-Source On-State Resistance (Maximum) RDS(on) 2Ohm
Power Dissipation (Maximum) PD 1.3W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 8.2nC

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